/PRZWT/~ Demonstrate efficient EcoGaN ™ and SiC power solutions~
During this year's annual industry event (June 11-13) at PCIM Europe in Nuremberg, Germany, ROHM will be showcasing new power semiconductor solutions, especially wideband gap devices. ROHM's extensive portfolio of SiC, Si and GaN products is designed to meet the needs of various application fields, especially in the electric vehicle and power application fields. Following the philosophy of "Empowering Growth, Driving Innovation", ROHM continues to use technology to promote sustainable development and solve various problems facing society and ecology.
ROHM's products and product highlights on display at booth 304 in Hall 9 are as follows:
SiC (silicon carbide):
As a leader in the SiC industry, ROHM will debut its new SiC power module for automotive applications at PCIM Europe 2024. In addition to this, ROHM will demonstrate the conversion of the production process to an 8-inch SiC wafer process and discuss the future direction of SiC products. ROHM's 4th generation SiC MOSFETs achieve ultra-low on-resistance in the industry, enable greater switching losses, and support 15V and 18V gate-source voltages.
GaN (gallium nitride):
ROHM will demonstrate the EcoGaN ™ series of 150V and 650V GaN HEMTs in several evaluation kits. The Power Stage ICBM3G0xxMUV-LB, which includes a built-in 650V GaN HEMT and gate driver, enables more integrated and smaller PFC and QR (quasi-resonant) flyback converters. These devices provide better solutions for a variety of electronic systems requiring high power density and efficiency. ROHM will also showcase related boards for more than a dozen EcoGaN ™ series products and their contribution to industrial solutions.
During the exhibition, ROHM's power experts will participate in several panel discussions and give several conference presentations. In addition, they will also display relevant posters at the exhibition.
